HOD HASHARON, Israel, July 30, 2024 -- Weebit Nano Limited (ASX:WBT), a leading developer and licensor of advanced memory technologies for the global semiconductor industry, is participating at FMS: the Future of Memory and Storage 2024, being held August 6-8, 2024, in Santa Clara, California. FMS is the world’s largest conference and exhibition dedicated to the latest trends, innovations, and influencers driving the adoption of high-speed memory and storage technologies.
Weebit’s VP of Quality and Reliability, Amir Regev, is presenting during the Emerging Memories session on Wednesday, August 7th, discussing technology enhancements needed to proliferate resistive random-access memory (ReRAM or RRAM) even further into areas with extended requirements such as automotive applications. Mr. Regev will also highlight the performance of Weebit ReRAM on GlobalFoundries 22FDX® wafers including endurance and retention data – the first such ReRAM results.
FMS is being held at the Santa Clara Convention Center in Santa Clara, California on August 6-8, 2024.
The Emerging Memories session will be held on Wednesday, August 7th from 8:30 a.m. to 9:35 a.m. in Ballroom C. To register for the event, visit: https://fms.omnievent.com/2024/step-1-prelim.
Questions around this news
What will Weebit Nano present at FMS 2024?
Weebit Nano’s presentation will cover technology enhancements intended to support wider use of resistive random-access memory in applications with extended requirements, including automotive uses. Its VP of Quality and Reliability will also discuss ReRAM performance on GlobalFoundries 22FDX wafers, including endurance and retention results. The release describes these as the first such ReRAM results on those wafers.
What is resistive random-access memory?
Resistive random-access memory, often abbreviated ReRAM or RRAM, is a type of non-volatile memory. It stores information by changing the electrical resistance of a material. The resistance state represents stored data, and the memory retains that information when power is removed.
What do endurance and retention measure in memory technology?
Endurance describes how many times a memory cell can be written to or erased before its operation degrades beyond acceptable limits. Retention describes how long it can preserve stored data under specified conditions. Both properties are important when evaluating memory for applications that require dependable operation over time.
About Weebit Nano Limited
Weebit Nano Ltd. is a leading developer and licensor of advanced semiconductor memory technology. The company’s ground-breaking Resistive RAM (ReRAM) addresses the growing need for significantly higher performance and lower power memory solutions in a range of new electronic products such as Internet of Things (IoT) devices, smartphones, robotics, autonomous vehicles, 5G communications and artificial intelligence. Weebit’s ReRAM allows semiconductor memory elements to be significantly faster, less expensive, more reliable and more energy efficient than those using existing flash memory solutions. As it is based on fab-friendly materials, the technology can be quickly and easily integrated with existing flows and processes, without the need for special equipment or large investments. See www.weebit-nano.com and follow us on LinkedIn.
Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries. Other company, product, and service names may be trademarks or service marks of others.
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P: +1 650-336-4222
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In brief
Weebit Nano Limited says it will present results on its resistive random-access memory (ReRAM) technology at FMS: the Future of Memory and Storage 2024, scheduled for August 6–8 in Santa Clara, California. Amir Regev, the company’s vice president of quality and reliability, is due to speak in the Emerging Memories session on August 7. His presentation will address technology improvements relevant to applications with extended requirements, including automotive use, and discuss endurance and retention results from Weebit ReRAM on GlobalFoundries 22FDX wafers. The company describes these as the first such ReRAM results. The announcement focuses on Weebit’s conference participation and presentation, rather than a product launch or commercial agreement.
Key takeaways
- Weebit Nano will present ReRAM performance results at FMS 2024 in Santa Clara, California.
- Amir Regev is scheduled to speak during the Emerging Memories session on August 7.
- The presentation will cover endurance and retention results from ReRAM on GlobalFoundries 22FDX wafers.
- Weebit says the results are the first such ReRAM results.
Earlier from Weebit Nano Limited
- Weebit Nano and Efabless collaborate to enable easy, affordable prototyping of innovative SoC designs
- Weebit Nano to demo its ReRAM technology on GlobalFoundries’ 22FDX® platform
- Weebit Nano demonstrates performance of its ReRAM under extended automotive conditions
- Weebit Nano’s ReRAM IP Awarded ‘Embedded Solution Product of the Year’ in the Electronic Industry Awards
- Weebit Nano licenses ReRAM to DB HiTek, a global top-10 foundry
